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US 5,962,907 AGranted
Semiconductor device and method of manufacturing the same
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorKaoru Motonami
Life of this patent
Estimating the term…
Abstract
A semiconductor device having a memory device and a logic device formed together on a single chip is provided. A first element region and a second element region of a semiconductor substrate are formed spaced apart from each other with an isolation region therebetween. A floating conductive film is provided on the isolation region.
Claims8
A semiconductor device, comprising:
- a semiconductor substrate;
- a first element region and a second element region formed on said semiconductor substrate spaced apart from each other;
- an isolation region provided on said semiconductor substrate and separating said first element region from said second element region;
- a first MOS structure provided on said first element region and having a first gate electrode and a first gate insulation film;
- a second MOS structure provided on said second element region and having a second gate electrode and a second gate insulation film;
- and
- a conductive film provided on said isolation region wherein
- said conductive film includes a first conductive film formed of the same component as said first gate electrode and a second conductive film formed of the same component as said second gate electrode, and
- said second conductive film is provided such that a portion overlaps and is in direct contact with said first conductive film.
6 more elements
Dependencies are inferred from the claim text.