Method of forming a capacitor and a capacitor construction

A stacked capacitor construction, comprising:

• a substrate;
• a pair of conductive runners on the substrate, the conductive runners having electrically conductive uppermost surfaces and being a first conductive runner and a second conductive runner;
• a first insulative cap over the uppermost surface of the first conductive runner, and a second insulative cap over the uppermost surface of the second conductive runner;
• a node on the substrate and positioned between the pair of runners;
• a conductive pillar between the conductive runners and electrically contacting the node;
• an insulating layer positioned over the conductive runners and having an opening therein, the insulating layer comprising a different material than the first and second insulative caps;
• a storage node layer within the opening and electrically contacting the conductive pillar, the storage node physically contacting both the first and second insulative caps;
• a dielectric layer proximate the storage node layer;
• and
• a conductive outer plate proximate the dielectric layer;
• and
• a recess extending downwardly into one of the insulative caps, the storage node layer extending downwardly into the recess.