Plasma CVD process and semiconductor device having metal film formed by the process

Abstract

A plasma CVD process of forming a metal film containing a residual halogen element in a small amount and a high reliability semiconductor device fabricated by the process. The plasma CVD process includes the step of forming a metal film on a substrate to be processed, using a mixed gas containing a metal halide and hydrogen, wherein the plasma CVD process adopts a plasma CVD condition which is determined in such a manner that emission spectrum intensities of a plasma of the mixed gas are measured; and a mixing ratio of the metal halide in the mixed gas is set to be not more than a value at which a decreasing rate, depending on mixing of the metal halide, of an emission spectrum intensity of a hydrogen spectral line is rapidly changed and also at which an increasing ratio, depending on mixing of the metal halide, of an emission spectrum intensity of a halogen element is rapidly changed.

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