Method of manufacturing semiconductor devices
AssigneeNEC Corporation
InventorTomotake Morita
Life of this patent
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Abstract
A method of manufacturing semiconductor devices that provides excellent controllability and workability in planarizing the isolation area. The novel method comprises the steps of: forming a filling material on a semiconductor substrate formed with a plurality of trenches such that the plurality of trenches are filled up with the filling material; forming a mask having a pattern obtained by inverting a pattern of the plurality of trenches onto the surface of the filling material; etching the filling material to a predetermined depth by use of the mask to leave a protruding portion composed of the filling material on each of the plurality of trenches; and removing the mask and then the protruding portion for planarization.
Claims11
A method of manufacturing semiconductor devices comprising the steps of:
- forming a filling material on a semiconductor substrate having a plurality of trenches to fill said trenches;
- forming a mask layer having an inverted pattern of said plurality of trenches on said filling material;
- etching exposed portions of the filling material using said mask layer and leaving a protruding portion composed of said filling material on each of said plurality of trenches;
- and
- removing said mask layer and then said protruding portion for planarization using only ion radiation.
A method of manufacturing semiconductor devices comprising the steps of:
- forming a stopper layer on element forming areas of a semiconductor substrate;
- forming a plurality of trenches on a surface of said semiconductor substrate outside said element forming areas;
- forming an insulation film over said semiconductor substrate to fill said plurality of trenches and to cover said stopper layer;
- forming a mask layer having a pattern on said insulation film, said mask pattern having an opening over each of said element forming areas;
- exposing said stopper layer by etching said insulation film using said mask layer as a mask, and forming a protruding portion composed of said insulation film protruding from each of said plurality of trenches;
- and
- removing said mask layer and then the protruding portions for planarizing the surface of said semiconductor substrate using only ion radiation.
Dependencies are inferred from the claim text.