Techniques for reducing particulate contamination on a substrate during processing

A gas distribution mechanism designed to preferentially reduce entrainment of gas from a given portion of a substrate processing chamber into a gas jet released into said substrate processing chamber, comprising:

• a first curved slit-shaped gas port, said first gas port having a curved slit-shaped opening, said first gas port being disposed such that an outer curve of said first curved slit-shaped gas port is disposed toward said given portion of said substrate processing chamber, an inner curve of said first curved slit-shaped gas port being disposed toward a substrate to be processed within said substrate processing chamber, said first curved shaped gas port being configured to introduce said gas jet through said curved slit-shaped opening into said substrate processing chamber.

A substrate processing system configured for processing a substrate utilizing source gas released from at least one gas jet into a substrate processing chamber of said substrate processing system, comprising:

• a first gas port configured to introduce said gas jet into said substrate processing chamber;
• a directional blocking wall protruding above a plane formed by the opening of said first gas port, said directional blocking wall being disposed closer to a first portion of a circumference of said first gas port than a second portion of said circumference, said first portion of said circumference being configured to be disposed toward a given portion of said substrate processing chamber such that said gas jet is disposed between said directional blocking wall and a substrate, said substrate being disposed within said substrate processing chamber for substrate processing, and such that said directional blocking wall is disposed between said gas jet and said given portion of said substrate processing chamber, thereby preferentially reducing said entrainment of said gas from said given portion of said substrate processing chamber into said gas jet when said gas jet is released into said substrate processing chamber.