Nucleation of diamond films using an electrode
AssigneeKabushiki Kaisha Kobe Seiko Sho
InventorsDavid Stephen Buhaenko, Carolyn Elizabeth Beer, Peter John Ellis
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Abstract
Method and apparatus are disclosed for growing diamond films on a non-diamond substrate, such as a silicon wafer. The substrate surface is subjected to nucleation by means of a microwave-generated plasma while applying an electrical bias to the substrate and while an electrode is positioned adjacent to but spaced from the substrate surface. After the nucleation step, crystalline diamond is deposited on the nucleated surface from a carbon-containing plasma.
Claims10
A method of growing a diamond film by microwave chemical vapour deposition (CVD) on a non-diamond substrate which comprises effecting nucleation of the substrate surface for diamond growth by subjecting the surface to a microwave plasma while applying an electrical bias to the substrate surface, wherein an electrode is introduced into the microwave plasma and above or adjacent to the substrate surface and crystalline diamond is deposited on the resulting nucleated surface from a carbon-containing plasma.
Dependencies are inferred from the claim text.