Method for pulling a single crystal
AssigneeSumitomo Sitix Corporation
InventorNaoki Ikeda
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Abstract
A method and apparatus for pulling a single crystal by, for example, the Czochralski method where a melt is heated by heaters arranged around, or around and below a crucible. Auxiliary heaters are provided above the crucible to directly heat the melt to supplement the heaters arranged around, or around and below the crucible, so as to reduce the power of the heaters arranged around, or around and below the crucible. According to the method, a single crystal is pulled under the condition of the local highest temperature of a quartz crucible of 1600.degree. C. or less.
Claims1
A method of pulling a single crystal, comprising the steps of dipping a seed crystal in a metal formed in a quartz crucible and pulling a single crystal, wherein the single crystal is pulled under a condition of a local highest temperature of the quartz crucible is 1600.degree. C. or less.
Dependencies are inferred from the claim text.