Method of making mask pattern utilizing sizing dependent on mask material and mask formed through the method
AssigneeSony Corporation
InventorAtsushi Sekiguchi
Life of this patent
Estimating the term…
Abstract
A method of making a mask pattern is provided for achieving an alignment mark closer to the size of design pattern with any mask material and with any type and size of target pattern so that overlay accuracy of micro target pattern is improved. Sizing processing is performed on an alignment mark pattern (design pattern) in each step of pattern formation process, depending on a mask material (resist) and a type and a size of a target pattern. A sizing pattern thereby formed is printed on a mask substrate. The form and size of printed pattern is substantially equal to the alignment mark pattern of the design size.
Claims10
A method of making a mask pattern including a target pattern for a mask and an alignment mark pattern for overlaying, including the step of:
- performing sizing processing on a design pattern of the alignment mark pattern depending on a mask material in each step of a pattern formation process.
A mask including a target pattern and an alignment mark formed through printing an alignment mark pattern wherein sizing processing is performed on a design pattern of the alignment mark pattern depending on a mask material.
Dependencies are inferred from the claim text.