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US 5,958,519 AGranted
Method for forming oxide film on III-V substrate
AssigneeNational Science Council
InventorsHwei-Heng Wang, Yeong-Her Wang, Mau-Phon Houng
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Abstract
A method is provided for forming an oxide film on a III-V substrate. The method includes steps of (a) preparing an acidic solution containing a IIIA-ion, (b) adding an basic solution into the acidic solution to provide a growth solution of a specific pH value, and (c) placing the III-V substrate into the growth solution to form the oxide film on the III-V substrate.
Claims18
A method for forming an oxide film on a IIIA-VA substrate comprising:
- (a) preparing an acidic solution containing a IIIA-ion;
- (b) adding an basic solution into said acidic solution to provide a growth solution of a specific pH value ranging from 4.0 to 5.5;
- and
- (c) placing said IIIA-VA substrate into said growth solution to form a IIIA oxide-VA oxide film on said IIIA-VA substrate.
1 more element
A method for forming an oxide film on a IIIA-VA substrate comprising:
- (a) preparing a desired amount of a basic solution;
- (b) adding an acidic solution containing a IIIA-ion into said basic solution to provide a growth solution of a specific pH value ranging from 4.0 to 5.5;
- and
- (c) placing said IIIA-VA substrate into said growth solution to form a IIIA oxide-VA oxide film on said III-V substrate.
1 more element
Dependencies are inferred from the claim text.