Process for forming a semiconductor device

A process for forming a semiconductor device comprising the steps of:

• forming an insulating layer over a semiconductor device substrate;
• and
• forming a first layer over the insulating layer, wherein:
• the first layer includes a semiconductor and a metal;
• the first layer has a first surface and a second surface that is further from the insulating layer compared to the first surface;
• the first layer has a first location, a second location, and a third location, wherein the first location is closest to the first surface, the third location is closest to the second surface, and the second location lies between the first and second surfaces;
• and
• within the first layer, a semiconductor content is selected from a group consisting of:
• essentially stoichiometric at the second location and above 80 atomic percent at the first location or the third location;
• and
• at most 60 atomic percent at the second location and at least stoichiometric at the first location or the third location.