SiC single crystal and method for growth thereof

A method for the production of an SiC single crystal which is substantially free from defects corresponding to hexagonal etch pits and dislocations corresponding to shell-like etch pits, and which has a retarded density of pits and void defects caused by thermal etching, and which is substantially free from heterogeneous crystal grains,-which method comprises:

• a. introducing a seed crystal of SiC single crystal having an exposed face which forms a rotation angle .psi. around the c-axis of +5.degree. to -5.degree. with a plane deviating from {0001} plane by an angle .alpha..sub.1 of about 60.degree. to about 120.degree. in the direction of {1010} plane, and SiC powder as a raw material into a graphite crucible,
• b. elevating the temperature of said SiC powder in an atmosphere of inert gas to a level sufficient for sublimation, while
• c. elevating the temperature of the exposed face of said seed crystal to a level slightly lower than the temperature of said SiC powder, and
• d. keeping said SiC powder and said seed crystal at the above temperatures for a period sufficient for an SiC single crystal of the same polytype as said seed crystal to grow to a desired height on said exposed face of said seed crystal,
• e. removing the resultant grown SiC single crystal from said crucible, and
• f. inserting a cut along a plane into the removed SiC single crystal, said plane passing a terminal part of the width relative to the direction of the c-axis of said seed crystal, intersecting by said angle .alpha..sub.1 said exposed face of said seed crystal and also intersecting perpendicularly the c-axis of said seed crystal, thereby obtaining a part of said grown SiC single crystal falling outside the width in the direction of the c-axis of said seed crystal.