US 5,953,622 A · Method for fabricating semiconductor wafers

Abstract

A method for fabricating silicon-on-insulator (SOI) wafers which is capable of simplifying the fabrication process while improving the productivity of SOI wafers. In accordance with this method, a first wafer formed with a thermal oxide film is bonded to a second wafer formed with an oxygen ion-implanted region and a hydrogen ion-implanted region. The bonded wafer structure is annealed and then cut along the hydrogen ion-implanted region, so that it is divided into two wafer structures. The wafer structure including the first wafer is annealed to obtain a strengthened chemical coupling property. The wafer structure including the second wafer is annealed to oxidize the oxygen ion-implanted region of the second wafer, thereby forming an oxide film in the second wafer. The first and second wafers are then planarized, thereby forming a pair of SOI wafers.

Claims20

Dependent claims

A method for fabricating semiconductor wafers, comprising the steps of:

providing a first wafer and a second wafer;
forming a thermal oxide film over the first wafer;
implanting oxygen ions in the second wafer, thereby forming an oxygen ion-implanted region;
implanting hydrogen ions in the second wafer, thereby forming a hydrogen ion-implanted region shallower than the oxygen ion-implanted region;
bonding the upper surface of the second wafer to the upper surface of the thermal oxide film formed over the first wafer;
annealing the bonded wafers;
cutting the bonded wafers along the hydrogen ion-implanted region, thereby forming a first silicon-on-insulator (SOI) wafer and a bare wafer;
annealing the first SOI wafer, thereby strengthening a chemical coupling property of the first SOI wafer;
annealing the bare wafer in such a manner that the oxygen ion-implanted region included in the bare wafer is oxidized, thereby forming a second SOI wafer;
and
planarizing the surfaces of the first and second SOI wafers.

8 more elements

Dependencies are inferred from the claim text.

Method for fabricating semiconductor wafers

Life of this patent

Method for fabricating semiconductor wafers

Life of this patent

Abstract

Claims20