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US 5,932,286 AGranted
Deposition of silicon nitride thin films
AssigneeApplied Materials, Inc.
InventorsIsrael Beinglass, Mahalingam Venkatesan
Life of this patent
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Abstract
Thin, uniform films of silicon nitride can be deposited onto a single substrate in a low pressure chemical vapor deposition process at a practicable rate from a gas mixture including a silane precursor gas and ammonia by maintaining the pressure at between about 5 and about 100 Torr. Deposition rates of up to about 185 angstroms per minute are readily achieved.
Claims7
A method of depositing films of silicon nitride onto a single substrate in a low pressure chemical vapor deposition chamber comprising
- a) supporting a single substrate in said chamber;
- b) adjusting the pressure to from about 5 to about 100 Torr and heating the substrate to a temperature of from about 650 to about 850.degree. C.;
- and
- c) passing a precursor gas mixture comprising a silane gas and ammonia into said chamber,
- thereby depositing a film of stoichiometric silicon nitride of uniform thickness onto said substrate.
2 more elements
Dependencies are inferred from the claim text.