Spin cleaning method
AssigneeTokyo Electron Limited
InventorKinya Ueno
Life of this patent
Estimating the term…
Abstract
At first, a semiconductor wafer is held and rotated by a spin chuck, and supplied with a hydrofluoric acid solution from a chemical liquid nozzle to remove natural oxide films on the wafer. Then, the wafer is supplied with pure water for rinsing it from a rinsing nozzle while the wafer is rotated. Right before the pure water stops being supplied, the wafer is supplied with an IPA liquid from a replacing medium nozzle while the wafer is rotated. The pure water is replaced with the IPA liquid by means of the Marangoni effect and a centrifugal force. Then, the wafer is rotated at 300 rpm for one second, at 3000 rpm for four seconds, and at 5000 rpm for five seconds, in this order, to remove the IPA liquid by means of a centrifugal force.
Claims23
A spin cleaning method comprising:
- an attaching step of attaching a target substrate having a surface to a rotatable spin chuck having a plurality of first clamp fingers to engage with a side of the substrate and fix the substrate;
- a chemical liquid treatment step of supplying a chemical liquid onto the surface of the substrate while rotating the substrate, after the attaching step;
- a rinsing step of supplying a rinsing liquid onto the surface of the substrate while rotating the substrate, after the chemical liquid treatment step;
- a replacing step of supplying a replacing medium liquid onto a substantial center of the surface of the substrate from above, and replacing the rinsing liquid with the replacing medium liquid on the surface of the substrate, the replacing medium liquid being mixable with the rinsing liquid and having a degree of surface tension lower than that of the rinsing liquid, supply of the replacing medium liquid being started before supply of the rinsing liquid is stopped, the substrate being rotated during the replacing step;
- and
- a removing step of removing the replacing liquid on the surface of the substrate by a centrifugal force which is generated by rotating the substrate.
A spin cleaning method comprising:
- an attaching step of attaching a target substrate having a surface to a rotatable spin chuck having a plurality of first clamp fingers to engage with a side of the substrate and fix the substrate;
- a chemical liquid treatment step of supplying a chemical liquid onto the surface of the substrate while rotating the substrate, after the attaching step;
- a rinsing step of supplying a rinsing liquid onto the surface of the substrate while rotating the substrate, after the chemical liquid treatment step;
- a replacing step of supplying a replacing medium vapor onto a substantial center of the surface of the substrate from above and under such conditions as to substantially maintain the replacing medium vapor in a vapor state, and replacing the rinsing liquid with the replacing medium vapor on the surface of the substrate, the replacing medium vapor being mixable with the rinsing liquid and having a degree of surface tension lower than that of the rinsing liquid, supply of the replacing medium vapor being started before supply of the rinsing liquid is stopped and while the substrate is being rotated, the substrate being rotated during the replacing step, the replacing medium vapor being supplied from a supply port which is moved above the substrate and scans the substrate radially outward from the substantial center of the surface in the replacing step;
- and
- a removing step of removing the replacing liquid on the surface of the substrate by a centrifugal force which is generated by rotating the substrate.
Dependencies are inferred from the claim text.