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US 5,861,676 AGranted
Method of forming robust interconnect and contact structures in a semiconductor and/or integrated circuit
AssigneeCypress Semiconductor Corporation
InventorTing Yen
Life of this patent
Estimating the term…
Abstract
A conducting trench in a dielectric layer can function as both (a) a plurality of contacts and (b) an interconnect in a semiconductor device. The conducting trench may be made by depositing a conductor in a trough formed in a dielectric layer of the device.
Claims20
A method of forming an interconnect and/or contact structure in a semiconductor or integrated circuit, comprising:
- forming a trough in a structure comprising a semiconductor substrate, gates on said substrate, an etch stop layer on at least a first portion of said substrate, and a dielectric layer on at least a second portion of said substrate, wherein portions of said etch stop layer and a plurality of substrate regions are exposed in said trough;
- and
- depositing a conductor in said trough, thereby forming a conducting trench;
- wherein said conducting trench electrically connects at least two of said substrate regions, and said conducting trench contacts portions of said etch stop layer.
1 more element
A method of forming an interconnect and/or contact structure in a semiconductor or integrated circuit, comprising:
- etching a pattern through an etch stop layer on at least a first portion of a substrate, thereby exposing a plurality of substrate regions;
- followed by
- depositing a dielectric layer on said substrate;
- wherein gates are on said substrate, and said etch stop layer is on a portion of said gates.
1 more element
A semiconductor device, comprising:
- (i) a substrate,
- (ii) gates on said substrate,
- (iii) an etch stop layer on at least a first portion of said substrate,
- (iv) a dielectric layer on at least a second portion of said substrate, and
- (v) a conducting trench in said dielectric layer, electrically connecting at least two substrate regions and contacting portions of said etch stop layer.
2 more elements
Dependencies are inferred from the claim text.