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US 5,861,653 AGranted
Semiconductor device having gaseous isolating layer formed in inter-level insulating layer and process of fabrication thereof
AssigneeNEC Corporation
InventorHiromitsu Hada
Life of this patent
Estimating the term…
Abstract
An inter-level insulating structure is formed by a lower silicon oxide layer, an upper silicon oxide layer and an air layer filling a gap between the lower silicon oxide layer and the upper silicon oxide layer, and the air layer decreases the effective dielectric constant so that a parasitic capacitance across the inter-level insulating structure is drastically decreased.
Claims3
A semiconductor device comprising:
- a first conductive layer and a second conductive layer;
- and
- an inter-level insulating layer provided between said first conductive layer and said second conductive layer so as to form a parasitic capacitor together with said first conductive layer and said second conductive layer, and including a first insulating layer, a second insulating layer spaced from said first insulating layer for forming a gap and a gaseous isolating layer filling said gap,
- said first conductive layer and said second conductive layer serving as a gate electrode and a signal wiring bonded to said second insulating layer of said inter-level insulating layer,
- said first conductive layer forming a field effect transistor together with source and drain regions formed in a semiconductor layer and a gate insulating layer between said semiconductor layer and said gate electrode.
2 more elements
A semiconductor device comprising:
- a first conductive layer and a second conductive layer;
- and
- an inter-level insulating layer provided between said first conductive layer and said second conductive layer so as to form a parasitic capacitor together with said first conductive layer and said second conductive layer, and including a first insulating layer, a second insulating layer spaced from said first insulating layer for forming a gap and a gaseous isolating layer filing said gap,
- said first conductive layer and said second conductive layer serving as a lower wiring layer and an upper wiring layer extending over said inter-level insulating layer.
1 more element
Dependencies are inferred from the claim text.