US 5,861,650 A · Semiconductor device comprising an FPGA

Abstract

The semiconductor device includes a silicon substrate, field effect transistors, a flash memory and a separating portion. A plurality of field effect transistors are formed on semiconductor substrate. A flash memory is formed on semiconductor substrate. Separating portion includes a separation electrode. Separating portion electrically separates the plurality of field effect transistors from each other. Separating portion is formed insulated on silicon substrate. Flash memory includes a floating gate electrode and a control gate electrode. Floating gate electrode is formed insulated on silicon substrate. Control gate electrode is formed insulated on floating gate electrode. Separation electrode and floating gate electrode have approximately the same thickness.

Claims12

Dependent claims

A semiconductor device, comprising:

a semiconductor substrate;
a plurality of field effect transistors formed on said semiconductor substrate;
a memory cell array portion comprising a non-volatile memory cell transistor formed on said semiconductor substrate;
and
a first separating portion including a first separation electrode formed insulated on said semiconductor substrate for electrically separating said plurality of field effect transistors from each other:
wherein
said non-volatile memory cell transistor includes a floating gate electrode formed insulated on said semiconductor substrate, and
a control gate electrode formed insulated on said floating gate electrode;
and
said first separation electrode has approximately the same thickness as said floating gate electrode.

7 more elements

Dependencies are inferred from the claim text.

Semiconductor device comprising an FPGA

Life of this patent

Semiconductor device comprising an FPGA

Life of this patent

Abstract

Claims12