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US 5,859,459 AGranted
Semiconductor memory device and method of manufacturing the same
AssigneeSony Corporation
InventorNaoshi Ikeda
Life of this patent
Estimating the term…
Abstract
A semiconductor device comprising: a substrate, a gate insulating layer formed on the substrate, insulating isolation layers formed on each side of the gate insulating layer, an impurity diffusion region formed in the substrate beneath the insulating isolation layer, a first conductive layer formed on both the gate insulating layer and the insulating isolation layer, and an element splitting trench which split up at least the insulating isolation layer and the impurity diffusion layer into two parts respectively and form a trench in the substrate and is buried with conductive material.
Claims9
A semiconductor device comprising:
- a substrate,
- a gate insulating layer formed on the substrate,
- insulating isolation layers formed on each side of the gate insulating layer,
- an impurity diffusion region formed in the substrate beneath the insulating isolation layer, and
- an element splitting trench which separates at least the insulating isolation layer and the impurity diffusion region into two parts respectively wherein separated first and second parts of the impurity diffusion regions form respective source or drain regions of distinct memory transistors.
2 more elements
Dependencies are inferred from the claim text.