Metal contact structure in semiconductor device, and a method of forming the same
AssigneeLG Semicon Co., Ltd.
InventorHyun Sook Kim
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Abstract
A process of forming a metal contact portion of a semiconductor device and a structure thereof are disclosed. The process includes the steps of forming an insulating layer on a semiconductor substrate in which a doped junction has been formed, photo-etching the insulating layer to form a contact hole, forming a conductive layer on a surface of the substrate so that the conductive layer contacts the contact portion through the contact hole, and photo-etching the conductive layer to form a conductive projected portion, whereby a metal layer can contact surfaces of the conductive projected portion and the contact portion of the substrate.
Claims22
A process of forming a metal contact portion of a semiconductor device, comprising the steps of:
- forming a semiconductor substrate having a doped junction;
- forming an insulating layer on the semiconductor substrate;
- removing portions of the insulating layer to define a contact hole therethrough;
- forming a conductive projected portion on a portion of the doped junction using a photoresist pattern with a width less than a width of the contact hole;
- and
- forming a metal layer in the contact hole so that the metal layer contacts the doped junction and the conductive projected portion.
A method of forming a metal contact of a semiconductor device comprising the steps of:
- forming a substrate having a doped junction;
- forming an insulating layer pattern on the substrate to define a contact hole;
- forming a conductive projection on a portion of the doped junction;
- and
- forming a metal layer on opposite sides of the conductive projection so that the metal layer contacts the doped junction and the conductive projection.
Dependencies are inferred from the claim text.