Methods of fabricating field isolated semiconductor devices including step reducing regions
AssigneeSamsung Electronics Co., Ltd.
InventorsMyoung-seob Shim, Won-taek Choi, Yun-seung Shin
Life of this patent
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Abstract
Isolated semiconductor devices are formed by forming field oxide regions in a face of a semiconductor substrate to define active regions therebetween. The field oxide regions extend to above the substrate face and include an oblique surface which extends from above the substrate face to the substrate face. A step reducing region is formed on a respective one of the oblique surfaces of the field oxide regions, extending onto the active regions at the substrate face. The step reducing region can reduce the steepness of the step between the substrate face and the field oxide regions, thereby facilitating further processing and reliability of the semiconductor devices.
Claims9
An isolation method for a semiconductor device comprising the steps of:
- forming field oxide regions in a face of a semiconductor substrate to define active regions therebetween, the field oxide regions extending above the substrate face and including an oblique surface which extends from above the substrate face to the substrate face;
- and
- forming a step reducing region on a respective one of the oblique surfaces of the field oxide regions, extending onto the respective active regions at the substrate face, by performing the following steps:
- forming a patterned masking layer on the active regions, which is spaced apart from the field oxide regions;
- forming an insulating layer on the field oxide regions and on the active regions between the patterned masking layer and the field oxide regions;
- removing the patterned masking layer;
- and
- etching the insulating layer to form the step reducing region on a respective one of the oblique surfaces of the field oxide regions, and extending onto the respective active regions at the substrate face.
An isolation method for a semiconductor device comprising the steps of:
- sequentially forming a patterned pad insulation layer and a patterned oxidation preventing layer on a face of a semiconductor substrate to define field regions therebetween;
- oxidizing the field regions to form field oxide regions in the substrate face which extend to above the substrate face and which include an oblique surface which extends from above the substrate face to the pad insulation layer;
- further patterning the patterned oxidation preventing layer so that it is spaced apart from the field oxide regions;
- forming an insulating layer on the field oxide regions, on the further patterned oxidation preventing layer and between the further patterned oxidation preventing layer and the field oxide regions;
- removing the further patterned oxidation preventing layer and the patterned pad insulation layer between the further patterned oxidation preventing layer and the substrate face;
- and
- etching the insulating layer to form step reducing regions which extend from the pad insulating layer onto the oblique surfaces of the field oxide regions.
Dependencies are inferred from the claim text.