Annealing methods for forming isolation trenches
AssigneeSamsung Electronics Co., Ltd.
InventorsTai-su Park, Moon-han Park, Yu-gyun Shin, Han-sin Lee
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Abstract
A method for forming a microelectronic structure includes the steps of forming a mask layer on a substrate, forming a trench in the exposed portion of the substrate, forming a layer of an insulating material which fills the trench and covers the mask layer, and annealing the insulating material at a temperature of at least about 1,150.degree. C. The annealing step can be performed for a period of time of about .5 hours to about 8 hours, and the annealing step can be performed in an inert atmosphere.
Claims23
A method for forming a microelectronic structure, said method comprising the steps of:
- forming a mask layer on a substrate wherein said mask layer exposes a portion of said substrate;
- forming a trench in said exposed portion of said substrate;
- forming a layer of an insulating material which fills said trench and covers said mask layer;
- and
- annealing said insulating material at a temperature of at least 1,150.degree. C.
A method for forming a microelectronic structure, said method comprising the steps of:
- forming a mask layer on a substrate wherein said mask layer exposes a portion of said substrate;
- forming a trench in said exposed portion of said substrate;
- forming a layer of an insulating material which fills said trench and covers said mask layer;
- and
- annealing said insulating material at a temperature in the range of about 1,000.degree. C. to about 1,400.degree. C. for a period of time of about 0.5 hours to about 8 hours wherein said step of annealing said insulating material at a temperature in the range of 1,000.degree. C. to about 1,400.degree. C. comprises annealing said insulating material at a temperature of at least 1,150.degree. C.
Dependencies are inferred from the claim text.