Method of manufacturing self-aligned silicide
AssigneeUnited Microelectronics Corp.
InventorTung-Po Chen
Life of this patent
Estimating the term…
Abstract
The present invention disclose a salicide process with a self-preamorphization step to reduce the sheet resistance of the source/drain region. The salicide process, comprising the steps of performing a pre-amorphization step on the surface of the silicon and simultaneously forming a metal layer, further contains the substeps of applying a back bias to the bottom of the substrate, using ion metal plasma to transform the surface of the substrate into amorphous silicon, forming a metal layer on the surface of the substrate and then using a thermal process having two stages to transform the metal into the salicide.
Claims9
A method of manufacturing a self-aligned silicide with a self-preamorphization step, the silicide process being applicable to a device having a semiconductor substrate, the device comprising a device isolation region, a gate electrode, a spacer formed at a sidewall of the gate electrode and a source/drain region formed near the surface of the substrate and around the periphery of the gate electrode, comprising the steps of:
- forming a metal layer over the surface of the semiconductor substrate, including the steps of applying a back bias to the bottom of the semiconductor substrate, applying a metal ion plasma to the semiconductor surface, thereby bombarding the surfaces of the gate electrode and source/drain region to form an amorphous silicon surface layer while simultaneously forming the metal layer on the surface of the semiconductor substrate;
- and
- performing a thermal process to form a silicide layer on the surfaces of the gate electrode and source/drain region.
Dependencies are inferred from the claim text.