Method for fabricating charge coupled device (CCD) as semiconductor device of MOS structure

A method for fabricating a charge coupled device comprising the steps of:

• forming a first provisional oxide film on a semiconductor substrate;
• forming a first gate oxide film after selectively etching away said first provisional oxide film at a first layer transfer electrode formation region;
• forming selectively a first layer transfer electrode from a polycrystalline silicon film on said first gate oxide film of said first layer transfer electrode formation region;
• etching away an oxide film formed of said first provisional oxide film and said first gate oxide film between said first layer transfer electrodes;
• forming a second provisional oxide film on said semiconductor substrate;
• forming a second gate oxide film after selectively etching away said second provisional oxide film at a second layer transfer electrode formation region on said semiconductor substrate;
• and
• forming selectively a second layer transfer electrode from a polycrystalline silicon film on said second gate oxide film of said second layer transfer electrode formation region.