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US 5,858,577 AGranted
Phase shift mask and fabrication method thereof
AssigneeLG Semicon Co., Ltd.
InventorsJun-Seok Lee, Tae-Gak Kim
Life of this patent
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Abstract
A phase shift mask comprises a light transmitting substrate; a light shelding layer comprising an inorganic material formed on the light transmitting substrate; and a phase transition layer formed on the light shielding layer.
Claims15
A phase shift mask fabricating method comprising the steps of:
- forming an inorganic photosensitive film on a light transmitting substrate;
- forming a dopant containing layer on the inorganic photosensitive film;
- selectively exposing the dopant containing layer to a light source to selectively dope and to convert a portion of the inorganic photosensitive film where exposed to the light source to a light shielding layer;
- forming a phase transition layer on the light shielding layer, the phase transition layer having a width larger than the light shielding layer;
- and
- removing the inorganic photosensitive film except where selectively doped.
3 more elements
Dependencies are inferred from the claim text.