Method for altering the luminescence of a semiconductor
AssigneeSandia Corporation
InventorsJ. Charles Barbour, Duane B. Dimos
Life of this patent
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Abstract
A method is described for altering the luminescence of a light emitting semiconductor (LES) device. In particular, a method is described whereby a silicon LES device can be selectively irradiated with a radiation source effective for altering the intensity of luminescence of the irradiated region.
Claims21
A method for altering the luminescence of a light emitting semiconductor (LES) device comprising selectively irradiating regions of the LES device with a radiation source effective for altering the luminescence of the irradiated region.
A light emitting semiconductor (LES) device, comprising:
- a) a substrate;
- and
- b) a selectively irradiated luminescent layer formed on the substrate, wherein the luminescent layer includes regions capable of differing intensities of luminescence.
A light emitting semiconductor (LES) device, comprising irradiated luminescent material having regions capable of differing intensities of luminescence.
A light emitting semiconductor (LES) device, comprising:
- a) a substrate;
- and
- b) a porous layer of luminescent material formed on a substrate, wherein the layer of luminescent material is further composed of regions of irradiated and non-irradiated luminescent material capable of differing intensities of luminescence.
A light emitting semiconductor (LES) device, comprising:
- a) a substrate;
- and
- b) a porous layer of semiconductor material formed on the substrate, wherein the layer of semiconductor material is further composed of regions of irradiated and non-irradiated semiconductor material capable of differing intensities of luminescence.
Dependencies are inferred from the claim text.