Single crystal pulling apparatus

A single crystal pulling apparatus comprising:

• a gas tight container;
• an outer crucible inside said gas tight container;
• an inner crucible inside said gas tight container and communicating with said outer crucible;
• a source material supply tube suspended from an upper portion of said gas tight container having a lower opening positioned to allow granulated source material to exit said supply tube and be added to semiconductor melt retained in an area between said inner crucible and said outer crucible;
• and
• an inclined portion, provided at a slope relative to a horizontal plane at a at a lower end of said source material supply tube, for ensuring that said source material exiting from said lower opening of said material supply tube drops into said semiconductor melt in proximity to a side wall of said inner crucible.

A single crystal pulling apparatus comprising:

• a gas tight container;
• an outer crucible inside said gas tight container;
• an inner crucible inside said gas tight container and communicating with said outer crucible;
• and
• a source material supply tube, suspended from an upper portion of said gas tight container and having a lower opening positioned to permit granulated source material to exit said material supply tube and be added to semiconductor melt retained in an area between said inner crucible and said outer crucible, said source material supply tube having
• two longer side walls of a transverse cross section of said source material supply tube that face said inner crucible and said outer crucible, respectively,
• a plurality of baffle plates fitted alternately down two inner walls corresponding to two shorter sides of the transverse cross section for reducing the drop velocity of said source material as it exits said material supply tube;
• and
• an inclined portion, provided at a slope relative to a horizontal plane at a at a lower end of said source material supply tube, for ensuring that said source material exiting from said lower opening of said material supply tube drops into said semiconductor melt in proximity to a side wall of said inner crucible.

A single crystal pulling apparatus comprising:

• a gas tight container;
• an outer crucible inside said gas tight container;
• an inner crucible inside said gas tight container and communicating with said outer crucible;
• a source material supply tube suspended from an upper portion of said gas tight container and having a lower opening positioned to allow granulated source material to exit said supply tube and be added to semiconductor melt retained in an area between said inner crucible and said outer crucible;
• and
• an inclined portion, provided at a slope relative to a horizontal plane at a lower end of said source material supply tube, for ensuring that said source material exiting from said lower opening of said material supply tube drops into said semiconductor melt in proximity to a side wall of said inner crucible, wherein said inclined portion serves as a scattering means, for applying a horizontal component of force to said source material exiting from said lower opening of said material supply tube, in order to scatter the source material over the surface of said semiconductor melt.

A single crystal pulling apparatus comprising:

• a gas tight container;
• an outer crucible inside said gas tight container;
• an inner crucible inside said gas tight container and communicating with said outer crucible;
• a source material supply tube suspended from an upper portion of said gas tight container having a lower opening positioned to allow granulated source material to exit said supply tube and be added to semiconductor melt retained in an area between said inner crucible and said outer crucible;
• and
• an inclined portion, provided at a slope relative to a horizontal plane at a lower end of said source material supply tube, for ensuring that said source material exiting from said lower opening of said material supply tube drops into said semiconductor melt in proximity to a side wall of said inner crucible, wherein said inclined portion serves as a source material scattering means by applying a horizontal component of force to said source material exiting from a lower opening of said material supply tube in order to scatter the source material over the surface of said semiconductor melt, said source material scattering means including
• a capture plate, provided beneath said lower opening of said source material supply tube, for catching said source material exiting from said lower opening, and
• a space, maintained between said lower opening of said source material supply tube and capture plate, for ensuring that said source material falls outside the edges of said capture plate and exits through said lower opening.

A single crystal pulling apparatus comprising:

• a gas tight container;
• an outer crucible inside said gas tight container;
• an inner crucible inside said gas tight container and communicating with said outer crucible;
• a source material supply tube suspended from an upper portion of said gas tight container having a lower opening positioned to allow granulated source material to exit said supply tube and be added to semiconductor melt retained in an area between said inner crucible and said outer crucible;
• and
• an inclined portion, provided at a slope relative to a horizontal plane at a lower end of said source material supply tube, for ensuring that said source material exiting from said lower opening of said material supply tube drops into said semiconductor melt in proximity to a side wall of said inner crucible, wherein said inclined portion serves as a source material scattering means by applying a horizontal component of force to said source material exiting from said lower opening of said material supply tube in order to scatter the source material over the surface of said semiconductor melt, said source material scattering means including
• a capture plate, provided beneath said lower opening of said source material supply tube, for catching said source material exiting from said lower opening, said capture plate being inclined downwards in at least one of a direction of rotation of said double crucible and a direction towards external wall of outside crucible,
• wherein there is a space between said lower opening of said source material supply tube and said capture plate for ensuring that said source material falls outside the edges of said capture plate and exits through said lower opening.

A single crystal pulling apparatus comprising:

• a gas tight container;
• an outer crucible inside said gas tight container;
• an inner crucible inside said gas tight container and communicating with said outer crucible;
• a source material supply tube suspended from an upper portion of said gas tight container having a lower opening positioned to allow granulated source material to exit said supply tube and be added to semiconductor melt retained in an area between said inner crucible and said outer crucible;
• and
• an inclined portion, provided at a slope relative to a horizontal plane at a lower end of said source material supply tube, for ensuring that said source material exiting from said lower opening of said material supply tube drops into said semiconductor melt in proximity to a side wall of said inner crucible, wherein said inclined portion serves as a source material scattering means by applying a horizontal component of force to said source material exiting from said lower opening of said material supply tube in order to scatter the source material over the surface of said semiconductor melt, said source material scattering means including
• a capture plate, provided beneath said lower opening of said source material supply tube and supported by a stay provided on a tip end of said source material supply tube, for catching said source material exiting from lower opening,
• wherein there is a space between said lower opening of said source material supply tube and said capture plate for ensuring that said source material falls outside the edges of said capture plate and exits through said lower opening.

A single crystal pulling apparatus comprising:

• a gas tight container;
• an outer crucible inside said gas tight container;
• an inner crucible inside said gas tight container and communicating with said outer crucible;
• a source material supply tube suspended from an upper portion of said gas tight container having a lower opening positioned to allow granulated source material to exit said supply tube and be added to semiconductor melt retained in an area between said inner crucible and said outer crucible;
• and
• an inclined portion, provided at a slope relative to a horizontal plane at a lower end of said source material supply tube, for ensuring that said source material exiting from said lower opening of said material supply tube drops into said semiconductor melt in proximity to a side wall of said inner crucible, wherein said inclined portion serves as a source material scattering means by applying a horizontal component of force to said source material exiting from said lower opening of said material supply tube in order to scatter the source material over the surface of said semiconductor melt, said source material scattering means including
• a capture plate, provided beneath said lower opening of said source material supply tube and supported by a stay provided on a tip end of said source material supply tube for catching said source material exiting from said lower opening, said capture plate being inclined downwards in at least one of a direction of rotation of said double crucible and a direction towards external wall of outside crucible, and
• wherein there is a space between said lower opening of said source material supply tube and said capture plate for ensuring that said source material falls outside the edges of said capture plate and exits through said lower opening.

A single crystal pulling apparatus comprising:

• a gas tight container;
• an outer crucible inside said gas tight container;
• an inner crucible inside said gas tight container and communicating with said outer crucible;
• a source material supply tube suspended from an upper portion of said gas tight container having a lower opening positioned to allow granulated source material to exit said supply tube and be added to semiconductor melt retained in an area between said inner crucible and said outer crucible;
• and
• an inclined portion, provided at a slope relative to a horizontal plane at a lower end of said source material supply tube, for ensuring that said source material exiting from said lower opening of said material supply tube drops into said semiconductor melt in proximity to a side wall of said inner crucible, wherein said inclined portion serves as a source material scattering means by applying a horizontal component of force to said source material exiting from said lower opening of said material supply tube in order to scatter the source material over the surface of said semiconductor melt, said source material scattering means including
• a capture plate, provided beneath said lower opening of said source material supply tube and supported by a support member separate from said source material supply tube, for catching said source material exiting from lower opening, and
• wherein there is a space between said lower opening of said source material supply tube and said capture plate for ensuring that said source material falls outside the edges of said capture plate and exits through said lower opening.

A single crystal pulling apparatus comprising:

• a gas tight container;
• an outer crucible inside said gas tight container;
• an inner crucible inside said gas tight container and communicating with said outer crucible;
• a source material supply tube suspended from an upper portion of said gas tight container having a lower opening positioned to allow granulated source material to exit said supply tube and be added to semiconductor melt retained in an area between said inner crucible and said outer crucible;
• and
• an inclined portion, provided at a slope relative to a horizontal plane at a lower end of said source material supply tube, for ensuring that said source material exiting from said lower opening of said material supply tube drops into said semiconductor melt in proximity to a side wall of said inner crucible, wherein said inclined portion serves as a source material scattering means by applying a horizontal component of force to said source material exiting from said lower opening of said material supply tube in order to scatter the source material over the surface of said semiconductor melt, said source material scattering means including
• a capture plate, provided beneath said lower opening of said source material supply tube and supported by a support member separate from said source material supply tube, for catching said source material exiting from said lower opening, said capture plate being inclined downwards in at least one of a direction of rotation of said double crucible and a direction towards external wall of outside crucible, and
• wherein there is a space between said lower opening of said source material supply tube and said capture plate for ensuring that said source material falls outside the edges of said capture plate and exits through said lower opening.

A single crystal pulling apparatus comprising:

• a gas tight container;
• an outer crucible inside said gas tight container;
• an inner crucible inside said gas tight container and communicating with said outer crucible;
• a source material supply tube suspended from an upper portion of said gas tight container having a lower opening positioned to allow granulated source material to exit said supply tube and be added to semiconductor melt retained in an area between said inner crucible and said outer crucible;
• and
• an inclined portion, provided at a slope relative to a horizontal plane at a lower end of said source material supply tube, for ensuring that said source material exiting from said lower opening of said material supply tube drops into said semiconductor melt in proximity to a side wall of said inner crucible, wherein said inclined portion serves as a scattering means, for applying a horizontal component of force to said source material exiting from said lower opening of said material supply tube, in order to scatter the source material over the surface of said semiconductor melt, said source material scattering means including
• a curved portion, provided at a lower end of said source material supply tube, formed by curving said source material supply tube towards a horizontal direction,
• wherein said lower opening of said source material supply tube is positioned at the end of said curved portion and facing a direction of inner and outer crucible rotation.

A single crystal pulling apparatus comprising:

• a gas tight container;
• an outer crucible inside said gas tight container;
• an inner crucible inside said gas tight container and communicating with said outer crucible;
• a source material supply tube suspended from an upper portion of said gas tight container having a lower opening positioned to allow granulated source material to exit said supply tube and be added to semiconductor melt retained in an area between said inner crucible and said outer crucible;
• and
• an inclined portion, provided at a slope relative to a horizontal plane at a lower end of said source material supply tube, for ensuring that said source material exiting from said lower opening of said material supply tube drops into said semiconductor melt in proximity to a side wall of said inner crucible, wherein said inclined portion serves as a scattering means, for applying a horizontal component of force to said source material exiting from said lower opening of said material supply tube, in order to scatter the source material over the surface of said semiconductor melt, said source material scattering means including
• an inclined wall, provided at an upper edge of an outer wall of said outer crucible and sloping downwards toward said outer crucible,
• wherein said lower opening of said source material supply tube is positioned above said inclined wall.

A single crystal pulling apparatus comprising:

• a gas tight container with a lid portion;
• a crucible inside said gas tight container for retaining semiconductor melt;
• a source material supply tube passing through said lid portion of said gas tight container and having a lower opening positioned to allow granulated source material to be added to said semiconductor melt retained in said crucible;
• an internal tube, inserted within said source material supply tube, positioned inside said gas tight container, and stoppingly engaged by an engagement surface at a lower end portion of an outer surface of an upper wide diameter portion;
• and
• supply tube insertion section, for inserting said internal tube, formed within said lid portion and having an engagement aperture through which said internal tube is inserted and an engagement aperture wall with a supply tube stopping portion, formed by an upward facing engagement surface, for stoppingly engaging internal tube, said supply tube stopping portion having
• an insertion aperture, positioned adjacent to said engagement aperture, for inserting upper end portion of said internal tube, and
• a connection aperture, located between said insertion aperture and said engagement aperture, for passing said internal tube from said insertion aperture to said engagement aperture.

A single crystal pulling apparatus comprising:

• a gas tight container with a lid portion;
• a crucible inside said gas tight container for retaining semiconductor melt;
• a source material supply tube passing through said lid portion of said gas tight container and having a lower opening positioned to allow granulated source material to be added to said semiconductor melt retained in said crucible;
• an internal tube, inserted within said source material supply tube, positioned inside said gas tight container, and stoppingly engaged by an engagement surface at a lower end portion of an outer surface of an upper wide diameter portion;
• and
• supply tube insertion section, for inserting said internal tube, formed within said lid portion and having an engagement aperture through which said internal tube is inserted and an engagement aperture wall with a supply tube stopping portion, formed by an upward facing engagement surface, said supply tube stopping portion including a main body having
• an engagement aperture,
• an insertion aperture, positioned adjacent to said engagement aperture for inserting upper end portion of said internal tube,
• a connection aperture, located between said insertion aperture and said engagement aperture, for passing said internal tube from said insertion aperture to said engagement aperture, and
• a main body support section, for engaging and supporting said main body, wherein said main body and main body support section are formed in a shape such that said main body can be fitted with the location of said engagement aperture in two or more configurations with respect to said main body support section.

A single crystal pulling apparatus comprising:

• a gas tight container with a lid portion;
• a crucible inside said gas tight container for retaining semiconductor melt;
• a source material supply tube passing through said lid portion of said gas tight container and having a lower opening positioned to allow granulated source material to be added to said semiconductor melt retained in said crucible;
• an internal tube, inserted within said source material supply tube, positioned inside said gas tight container, and stoppingly engaged by an engagement surface at a lower end portion of an outer surface of an upper wide diameter portion;
• and
• supply tube insertion section, for inserting said internal tube, formed within said lid portion and having an engagement aperture through which said internal tube is inserted and an engagement aperture wall with a supply tube stopping portion, formed with a coolant flow passage for the flow of coolant, said supply tube stopping portion having
• an insertion aperture, positioned adjacent to said engagement aperture, for inserting upper end portion of said internal tube, and
• a connection aperture, located between said insertion aperture and said engagement aperture, for passing said internal tube from said insertion aperture to said engagement aperture.

A single crystal pulling apparatus comprising:

• a gas tight container with a lid portion;
• a crucible inside said gas tight container for retaining semiconductor melt;
• a source material supply tube passing through said lid portion of said gas tight container and having a lower opening positioned to allow granulated source material to be added to said semiconductor melt retained in said crucible;
• an internal tube, inserted within said source material supply tube, positioned inside said gas tight container, and stoppingly engaged by an engagement surface at a lower end portion of an outer surface of an upper wide diameter portion;
• and
• supply tube insertion section, for inserting said internal tube, formed within said lid portion and having an engagement aperture through which said internal tube is inserted and an engagement aperture wall with a supply tube stopping portion, said supply tube stopping portion formed with a coolant flow passage to accommodate the flow of coolant and includes a main body having
• an engagement aperture,
• an insertion aperture, positioned adjacent to said engagement aperture, for inserting upper end portion of said internal tube,
• a connection aperture, located between said insertion aperture and said engagement aperture, for passing said internal tube from said insertion aperture to said engagement aperture, and
• a main body support section, for engaging and supporting said main body, wherein said main body and main body support section are formed in a shape such that said main body can be fitted with the location of said engagement aperture in two or more configurations with respect to said main body support section.