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US 5,856,684 AGranted
High power HFET with improved channel interfaces
AssigneeMotorola, Inc.
InventorsYang Wang, Majid M. Hashemi, Kurt Eisenbeiser, Jenn-Hwa Huang
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Abstract
A high power heterojunction field effect transistor comprising a first barrier layer including a semiconductor material having a band gap, a second barrier layer including a semiconductor material having a band gap, a channel layer including a semiconductor material having a band gap narrower than the band gaps of the material included in the first barrier layer and the second barrier layer and sandwiched therebetween and an interface layer sandwiched between the channel layer and the first barrier layer.
Claims9
A high power heterojunction field effect transistor comprising:
- a substrate;
- a channel layer including InGaAs with a narrow band gap, supported on the substrate;
- a barrier layer including AlGaAs having a wider band gap than the narrow band gap of the InGaAs formed adjacent the channel layer;
- and
- an interface layer including GaAs sandwiched between the channel layer and the barrier layer, the interface layer having a band gap intermediate the band gap of the barrier layer and the band gap of the channel layer.
2 more elements
Dependencies are inferred from the claim text.