US 5,856,242 A · Method of producing dielectric thin film element

Abstract

A method for preparing an oxide dielectric thin film, for use in a dielectric thin film device, is described. Briefly, a film forming chamber is heated, and a thin film of dielectric, about 200 nm thick, is formed by sputtering or another deposition method. After the film is formed, evacuation of the film forming chamber is suspended, and oxygen gas is introduced into the chamber. The film is oxidized after its formation by maintaining the film in the oxygen atmosphere for a period of time, which can include cooling steps. The resulting dielectric thin film has excellent dielectric properties, such as a high dielectric constant and great dielectric strength.

Claims20

Dependent claims

A method of producing a dielectric thin film device provided with at least electrodes and an oxide dielectric thin film, said method comprising the steps of:

forming on a substrate the oxide dielectric thin film in a film forming chamber, and introducing oxygen into the film forming chamber so that the pressure of the introduced oxygen is higher than that during the oxide dielectric thin film formation, without taking the oxide dielectric thin film out of the film forming chamber;
and
keeping the substrate in the film forming chamber at said higher oxygen partial pressure, and thereafter cooling the dielectric thin film down in the film forming chamber.

Dependencies are inferred from the claim text.

Method of producing dielectric thin film element

Life of this patent

Method of producing dielectric thin film element

Life of this patent

Abstract

Claims20