Method for fabricating metal wire of semiconductor device

Abstract

A method for fabricating a metal wire of semiconductor devices is provided and comprises the steps of: depositing a barrier metal layer on an insulating film and subjecting the barrier metal layer to SF.sub.6 plasma treatment; forming an aluminum metal layer, a reflection-preventive layer and a photoresist film pattern on the surface of the barrier metal layer, in order; etching the reflection-preventive layer, the aluminum metal layer and the barrier metal layer to form a metal wire, with the photoresist film pattern serving as an etch mask; and removing the photoresist film pattern. The SF.sub.6 plasma treatment leaves no residue on the insulating film 2 during etching, as silicon nodule grows a little on the barrier metal layer when the aluminum metal layer is deposited thereon.

Dependencies are inferred from the claim text.