Method of forming a field programmable device

A method of forming a field programmable device of a semiconductor integrated circuit;

• comprising the steps of:
• forming a first conductive layer comprising aluminum;
• forming a first refractory metal layer over said first conductive layer;
• forming a first, fusible, dielectric layer over said first refractory metal layer;
• forming a second refractory metal layer over said first dielectric layer;
• patterning and etching said second refractory metal layer, said first dielectric layer and said first refractory metal layer to form a plurality of dielectric regions and exposing portions of said first conductive layer;
• forming a second dielectric layer over said second refractory metal layer and the exposed portions of said first conductive layer;
• forming a plurality of contact openings through said second dielectric layer exposing portions of said first conductive layer and portions of said second refractory metal layer;
• and
• forming a second conductive layer over said second dielectric layer and in the contact openings.

A method forming a field programmable device of a semiconductor integrated circuit, comprising the steps of:

• forming a first refractory metal layer, comprising tungsten, over a first conductive layer which comprises aluminum;
• forming a first fusible dielectric layer, comprising silicon nitride or oxide, on a portion of said first refractory metal layer;
• forming a second refractory metal layer, comprising tungsten, on the first dielectric layer;
• forming a second dielectric layer having a plurality of contact openings which extend therethrough to expose said first and second refractory metal layers;
• and
• forming a second conductive layer over a portion of the second dielectric layer and in the contact openings over the exposed portions of said first and second refactory metal layers.