Phase shift mask and method for manufacturing same

A phase shift mask device comprising:

• a substrate;
• a first mask having a first phase shift characteristic on a first region of the substrate;
• a second mask having a second phase shift characteristic on a second region of the substrate, the second phase characteristic being different from the first phase shift characteristic;
• a third mask having a third phase shift characteristic on a third region of the substrate, the third region having a diagonal relationship with the first region, and the third phase shift characteristic being substantially same as the first phase shift characteristic;
• and
• a fourth mask having a fourth phase shift characteristic on a fourth region of the substrate, the fourth region having a diagonal relationship with the second region, and the fourth phase shift characteristic being substantially same as the second phase shift characteristic.

A method for making a phase shift mask device having a transparent substrate, the method comprising the steps of:

• preparing a transparent substrate having first, second, third and fourth regions;
• forming a first phase shift layer on the transparent substrate;
• forming a second phase shift layer on the first phase shift layer;
• forming a shielding layer on the second phase shift layer;
• patterning the first phase shift layer, the second phase shift layer and the shielding layer to form first and second rim masks on the first and second regions, respectively, and first and second outrigger masks on the third and fourth regions, respectively,
• wherein the first rim mask has a diagonal relationship with respect to the second rim mask,
• wherein the first outrigger mask has a diagonal relationship with respect to the second outrigger mask,
• wherein the first and second rim masks include the first phase shift layer, the second phase shift layer adjacent the first phase shift layer, and the first light transparent portion adjacent the second phase shift layer, and
• wherein the first and second outrigger masks include the first phase shift layer, the second phase shift layer adjacent the first phase shift layer, the shielding layer adjacent the second phase shift layer, and a second light transparent portion adjacent the second phase shift layer.

A method for manufacturing a phase shift mask, the method comprising the steps of:

• sequentially forming a phase shift layer, a half-tone phase shift layer, and a shielding layer on a transparent substrate;
• patterning the shielding layer to form two shielding layer patterns having hollow centers;
• patterning the half-tone phase shift layer to form two half-tone phase shift layer patterns below the two shielding layer patterns using a first mask;
• removing a portion of the phase shift layer to form a corresponding open area exposing the substrate and within the half-tone phase shift layer patterns using a second mask;
• and
• patterning the phase shift layer to form two open areas at outer sides of the half-one phase shift layer patterns.