Ferroelectric film capacitor with intergranular insulation
AssigneeTexas Instruments Incorporated
InventorYasushiro Nishioka
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Abstract
A method of making ferroelectric film capacitors with sufficient yield for application to ULSI. In a first embodiment, after formation of a first ferroelectric film as the capacitor ferroelectric film, a very thin second ferroelectric film is deposited to fill the cavity portions generated between the crystal grains. This reduces the leakage current and increases the capacitor yield. In second embodiment, the cavity portions are filled with an insulating layer.
Claims12
A semiconductor device including a ferroelectric film capacitor having a laminated configuration, the ferroelectric film capacitor comprising:
- a substrate;
- a lower electrode formed over the substrate;
- a first ferroelectric film formed over the lower electrode, the first ferroelectric film being crystallized and having intergranular cavities substantially passed through to the surface of the lower electrode;
- a second ferroelectric film formed over the first ferroelectric film, materials of the second ferroelectric film being filled in the intergranular cavities of the first ferroelectric film;
- and
- an upper electrode formed over the second ferroelectric film.
A semiconductor device including a ferroelectric film capacitor having a laminated configuration, the ferroelectric film capacitor comprising:
- a substrate;
- a lower electrode formed over the substrate;
- a ferroelectric film formed over the lower electrode, the ferroelectric film being crystallized and having intergranular cavities substantially passed through to the surface of the lower electrode;
- an insulating oxide film, of a material different from the ferroelectric film, formed over the ferroelectric film, materials of the insulating oxide film being filled in the intergranular cavities of the ferroelectric film;
- and
- an upper electrode formed over the insulating oxide film.
Dependencies are inferred from the claim text.