Passivation layer for a metal film to prevent metal corrosion

A method of fabrication a corrosion free metal layer comprising

• a) forming a metal layer composed of AlSiCu over a semiconductor structure;
• b) treating said metal layer with a F-containing plasma forming a passivation layer over said metal layer within 0.5 hours of the formation of said metal layer;
• said F-containing plasma comprising a plasma treatment at power of between 225 and 275 W, a pressure between about 80 and 120 mtorr, a CHF.sub.3 flow between about 40 and 60 sccm and for a duration between about 10 to 30 seconds;
• said passivation layer is composed of a polymeric of C, O and F and said passivation layer has a thickness in a range of between about 40 and 80 .ANG.;
• whereby said passivation layer prevents corrosion of said metal layer before a metal etch.

A method of fabrication a corrosion free metal layer comprising

• a) forming a metal layer composed of AlSiCu over a semiconductor structure;
• said metal layer having a thickness in a range of between about 4000 and 15,000 .ANG.;
• b) treating said metal layer with a F-containing plasma forming a passivation layer over said metal layer within 0.5 hours of the formation of said metal layer;
• said F-containing plasma comprising a plasma treatment at power of between 225 and 275 W, a pressure between about 80 and 120 mtorr, a CHF.sub.3 flow between about 40 and 60 sccm and for a duration between about 10 to 30 seconds;
• said passivation layer is composed of a polymeric of C, O and F and said passivation layer has a thickness in a range of between about 40 and 80 .ANG.;
• whereby said passivation layer prevents corrosion of said metal layer before a metal etch;
• c) forming a photoresist pattern over said passivation layer;
• said photoresist pattern having sidewalls;
• d) etching said passivation layer and said metal layer using said photoresist pattern as an etch mask forming a metal pattern;
• said metal pattern having sidewalls;
• and deposition a sidewall polymer over the sidewalls of said metal pattern and said photoresist pattern;
• and
• e) removing said sidewall polymer, said photoresist pattern and said passivation layer.

A method of fabricating corrosion free metal lines comprising:

• a) forming a metal layer over a semiconductor structure;
• b) treating said metal layer with a F-containing plasma forming a passivation layer over said metal layer;
• whereby said passivation layer prevents corrosion of said metal layer before a metal etch;
• c) forming a photoresist pattern over said passivation layer;
• said photoresist pattern having sidewalls;
• d) etching said passivation layer and said metal layer using said photoresist pattern as an etch mask forming a metal pattern;
• said metal pattern having sidewalls;
• and depositing a sidewall polymer over the sidewalls of said metal pattern and said photoresist pattern;
• and
• e) removing said sidewall polymer, said photoresist pattern and said passivation layer.

A method of fabricating corrosion free metal lines comprising:

• a) forming a metal layer over a semiconductor structure;
• b) treating said metal layer with a F-containing plasma forming a passivation layer over said metal layer;
• whereby said passivation layer prevents corrosion of said metal layer before a metal etch;
• said passivation layer is composed of a polymeric of C, O, and F;
• and said passivation layer having a thickness in a range of between 40 and 80 .ANG..

A method of fabrication a corrosion free metal lines consisting of:

• a) forming a metal layer over a semiconductor structure;
• said metal layer having an exposed surface;
• b) treating said metal layer with a F-containing plasma forming a passivation layer on the entire exposed surface said metal layer;
• whereby said passivation layer prevents corrosion of said metal layer before a metal etch or while in storage.