US 5,854,108 A · Method and system for providing a double diffuse implant junction in a flash device

Abstract

A system and method for providing a very short channel memory cell having a double diffuse implant junction is disclosed. The system and method comprise the sequential steps of providing a junction implant, providing a spacer, and providing a double diffuse implant. Because the double diffuse implant is provided after the spacer, the double diffuse implant does not extend as far under the gate of a memory cell after processing. Thus, the memory cell has a graded junction that does not substantially shorten the effective length of the channel. The memory cell can, therefore, function even as the size of the memory cell is decreased. In addition, the thermal cycling of the double diffuse implant may be decoupled from that of the junction implant. This is achieved without complicating processing. Consequently, overall system performance is enhanced.

Claims27

Dependent claims

A method for providing a memory cell having a channel comprising the sequential steps of:

(a) providing a junction implant to the memory cell proximate to the channel;
(b) providing a spacer to the memory cell proximate to the junction implant;
and
(c) providing a double diffuse implant to the memory cell proximate to the junction implant and the channel, wherein an effective channel length is not substantially reduced.

1 more element

Dependencies are inferred from the claim text.

Method and system for providing a double diffuse implant junction in a flash device

Life of this patent

Method and system for providing a double diffuse implant junction in a flash device

Life of this patent

Abstract

Claims27