Method for forming capacitor of semiconductor device
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsCheol Soo Park, Dae Young Kim
Life of this patent
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Abstract
A method for forming a capacitor of a semiconductor device, by which a three dimensional structure of a storage electrode occupying small space but having a great surface area is formed between word lines or bit lines. According to the method, an additional planarization layer is not formed on the word lines or the bit lines, so as to make the three dimensional structure high. Thus, the storage electrode comes to have an enlarged surface area enough to allow the formation of a capacitor with a sufficient capacitance for the high integration of semiconductor devices and thus to improve the properties and the reliability of semiconductor devices.
Claims15
A method for forming a capacitor of a semiconductor device, comprising the steps of:
- planarizing a structure formed on a semiconductor substrate;
- forming a first storage electrode contact hole through which a region of the semiconductor substrate is exposed and a bit line contact hole, at once;
- burying the first storage electrode contact hole and bit line contact hole with a first conductive layer, to form a contact plug;
- laying a first insulating film at a thickness entirely on the resulting structure from the previous step and forming a bit line over the first insulating film;
- forming a second insulating film at a thickness entirely over the resulting structure from the previous step;
- depositing a blanket of a third insulating film to planarize the second insulating film;
- executing a self alignment contact etch process to form a second storage electrode contact hole through which the contact plug of the first storage electrode contact hole is exposed;
- forming a second conductive layer at a thickness entirely over the resulting structure from the previous step;
- forming a spacer of a fourth insulating film at a side wall of the second storage electrode contact hole;
- burying the second storage electrode contact hole with a third conductive layer;
- subjecting the second and the third conductive layers and the fourth insulating film to planarization etch until the third insulating film is exposed;
- and
- eliminating the third insulating film and the fourth insulating film present within the second storage electrode contact hole, to create a storage electrode with a great surface area.
A method for forming a capacitor of a semiconductor device, comprising the steps of:
- planarizing a structure formed on a semiconductor substrate;
- forming a first storage electrode contact hole through which a region of the semiconductor substrate is exposed and a bit line contact hole, at once;
- burying the first storage electrode contact hole and bit line contact hole with a first conductive layer, to form a contact plug;
- laying a first insulating film at a thickness entirely on the resulting structure from the previous step and forming a bit line over the first insulating film;
- forming a second insulating film at a thickness entirely over the resulting structure from the previous step;
- depositing a blanket of a third insulating film to planarize the second insulating film;
- forming an etch barrier layer over the third insulating film;
- executing a self alignment contact etch process to form a second storage electrode contact hole through which the contact plug of the first storage electrode contact hole is exposed;
- forming a second conductive layer at a thickness entirely over the resulting structure from the previous step;
- forming a spacer of a fourth insulating film at a side wall of the second storage electrode contact hole;
- burying the second storage electrode contact hole with a third conductive layer;
- subjecting the second and the third conductive layers and the fourth insulating film to planarization etch until the third insulating film is exposed;
- and
- eliminating the third insulating film and the fourth insulating film present within the second storage electrode contact hole, to create a storage electrode with a great surface area.
Dependencies are inferred from the claim text.