Dummy wafer
AssigneeNisshinbo Industries, Inc.
InventorsKazuo Saito, Yasushi Mochizuki, Seiji Yamamoto
Life of this patent
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Abstract
A dummy wafer for use in a process for thin film formation on a wafer, which is made of a silicon carbide obtained by reacting a glassy carbon with silicon or with a silicon-containing gas, or comprises (1) a silicon carbide obtained by reacting a glassy carbon with silicon or with a silicon-containing gas and (2) a silicon carbide layer formed thereon by CVD. This dummy wafer alleviates the problems of the prior art; shows no warpage and contains no metal to become a contamination source for a semiconductor; has corrosion resistance to hydrofluoric acid, hydrochloric acid, etc., heat resistance and resistance to repeated heat cycles; and is inexpensive.
Claims6
A dummy wafer for use in a process for thin film formation on a wafer, said dummy wafer being made of a silicon carbide obtained by reacting a glassy carbon with silicon or with a silicon-containing gas.
A dummy wafer for use in a process for thin film formation on a wafer, said dummy wafer comprising (1) a silicon carbide obtained by reacting a glassy carbon with silicon or with a silicon-containg gas and (2) a silicon carbide layer formed on said silicon carbide by CVD.
Dependencies are inferred from the claim text.