Method of planarizing an insulating layer in a semiconductor device
AssigneeHyundai Electronics Industries Co., Ltd.
InventorSang Yong Kim
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Abstract
The present invention discloses a method of planarizing an insulating layer of a semiconductor device. The method of the present invention comprises a first polishing step for rotating the platen and the rotating carrier holding the wafer contacted with the polishing pad secured to the platen, applying a nitrogen (N.sub.2) gas to the rear surface of the wafer to contact a surface of the wafer with the polishing pad, and applying force to the wafer through the rotating carrier to press the wafer against the polishing pad. Then, a second polishing step for increasing a speed of revolution of the platen and the rotating carrier and decreasing the force applied to the wafer is performed.
Claims7
A method of planarizing an insulating layer of a semiconductor device using a chemical mechanical polish apparatus which comprises a rotatable platen, a polishing pad secured to said platen and a rotating carrier having recesses for holding a wafer, said rotating carrier operated to position said wafer on said polishing pad, the method comprising steps of:
- a first polishing step for rotating said platen and said rotating carrier holding said wafer contacted with said polishing pad secured to said platen, applying a nitrogen (N.sub.2) gas to the rear surface of the wafer to contact a surface of said wafer with the polishing pad, and applying force to said wafer through said rotating carrier to press said wafer against said polishing pad;
- a second polishing step for increasing a speed of revolution of said platen and said rotating carrier and decreasing the force applied to said wafer.
Dependencies are inferred from the claim text.