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US 5,852,327 AGranted
Semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsShigeki Komori, Tomohiko Yamashita, Masahide Inuishi
Life of this patent
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Abstract
In a semiconductor substrate of a semiconductor device, a plural impurity layers of the same conductivity type as the substrate are formed. An impurity region of an opposite conductivity type penetrates at least one of the impurity layers to a certain depth from the main surface of the semiconductor substrate. The bottom surface of the impurity region terminates between the impurity layers where the impurity concentration is lower. A contact conductor is led out from the impurity region.
Claims10
A semiconductor device comprising a semiconductor substrate of a first conductivity type;
- either:
- a single impurity layers or more than one spaced apart impurity layers of the first conductivity type formed in said semiconductor substrate, said single impurity layer or more than one spaced apart impurity layers of the first conductivity type having higher impurity concentration than said semiconductor substrate of a first conductivity type;
- an impurity region of a second conductivity type penetrating one of said impurity layer or layers and extending to a predetermined depth from a main surface of said semiconductor substrate, said impurity region of a second conductivity type terminating in said semiconductor substrate apart from said impurity layer or layers;
- a contact conductor formed on the main surface of said semiconductor substrate in contact with said impurity region.
1 more element
Dependencies are inferred from the claim text.