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US 5,852,319 AGranted
Gate electrode for semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsYoung-sun Kim, Nae-in Lee, Dae-hong Ko
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Abstract
A gate electrode in a semiconductor device comprising; a gate oxide layer formed on a semiconductor substrate, a polysilicon layer formed on the gate oxide layer, a silicide layer formed on the polysilicon layer and, a metal silicide layer formed on the silicide layer.
Claims5
A gate electrode in a semiconductor device, comprising:
- a gate oxide layer formed on a semiconductor substrate;
- a polysilicon layer formed on the gate oxide layer;
- a first silicide layer having a first melting point formed over the polysilicon layer;
- and
- a second silicide layer having a second melting point formed between the polysilicon layer and the first silicide layer, to prevent metal particles from contaminating the gate oxide layer and to prevent silicon particles from contaminating the first silicide layer,
- wherein the second melting point is higher than the first melting point.
3 more elements
A gate electrode in a semiconductor device, comprising:
- a gate oxide layer formed on a semiconductor substrate;
- a polysilicon layer formed on the gate oxide layer;
- a titanium silicide layer formed over the polysilicon layer;
- and
- a metal silicide layer having a higher melting point than that of titanium silicide formed between the polysilicon layer and the titanium silicide layer, to prevent titanium particles from contaminating the gate oxide layer and to prevent silicon particles from contaminating the titanium silicide layer.
2 more elements
Dependencies are inferred from the claim text.