Semiconductor device with capacitor
AssigneeKabushiki Kaisha Toshiba
InventorsTomonori Aoyama, Keitaro Imai
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Abstract
A semiconductor device comprising a semiconductor substrate and a capacitor formed on the semiconductor substrate, wherein the capacitor is formed of a multilayer comprising a first electrode disposed close to the semiconductor substrate, a second electrode disposed remote from the semiconductor substrate and a dielectric film formed of a metal oxide and interposed between the first electrode and the second electrode, and at least either one of the first and second electrodes contains oxygen and is constituted by an element selected from either one of Group 7A and Group 8 elements belonging to either one of the fifth and sixth periods of Periodic Table, the content of oxygen being in a range of 0.004 to 5 atom.%.
Claims7
A semiconductor device comprising:
- a semiconductor substrate;
- and
- a capacitor formed on the semiconductor substrate, said capacitor including,
- a first electrode,
- a second electrode,
- a dielectric metal oxide film interposed between said first electrode and said second electrode, and
- wherein at least one of said first and second electrodes contains oxygen in a range of 0.004 to 5 atom % and at least one element selected from either one of Group 7A and Group 8 Periodic Table elements belonging to either one of fifth and sixth periods, the oxygen being contained in a quantity less than a stoichiometric quantity of oxygen that can exist in an oxide of said element.
A semiconductor device comprising:
- a semiconductor substrate;
- and
- a capacitor formed on the semiconductor substrate, said capacitor including,
- a first electrode,
- a second electrode,
- a dielectric metal oxide film interposed between said first electrode and said second electrode, and
- wherein at least one of said first and second electrodes contains oxygen in a range of 0.1 to 5 atom % and at least one element selected from either one of Group 7A and Group 8 Periodic Table elements belonging to either one of fifth and sixth periods, the oxygen being contained in a quantity less than a stoichiometric quantity of oxygen that can exist in an oxide of said element.
Dependencies are inferred from the claim text.