Method of manufacturing oxide crystal
AssigneesSumitomo Electric Industries, Ltd., Ishikawajima-Harima Heavy Industries Co., Ltd., International Superconductivity Technology Center
InventorsYasuo Namikawa, Xin Yao, Masahiro Egami, Yuh Shiohara
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Abstract
A large oxide crystal of high quality is manufactured by increasing the speed of crystal growth without affecting crystal growth. A melt of BaO--CuO as a raw material put in a crucible is heated and melt in the presence of a solid phase precipitate of Y.sub.2 BaCuO.sub.5 and kept at a prescribed temperature. Thereafter, a seed crystal is pulled up while being rotated, with the seed crystal being in contact with the surface of the melt, whereby an oxide crystal having the structure of YBa.sub.2 Cu.sub.3 O.sub.7-x this method, an atmosphere for growing the oxide crystal has an oxygen partial pressure higher than that in an ambient atmosphere.
Claims8
A method of manufacturing an oxide crystal for growing an oxide crystal having a structure of R.sub.1+x Ba.sub.2-x Cu.sub.3 O.sub.7-z (where R is an element selected from the group consisting of yttrium and lanthanoids group elements, 0.ltoreq.x.ltoreq.1, 0.ltoreq.z.ltoreq.1)by heating and melting a raw material put in a crucible, keeping it at a prescribed temperature and pulling up a seed crystal while rotating the same with the seed crystal being in contact with a surface of a melt, wherein
- an atmosphere for growing said oxide crystal has an oxygen partial pressure higher than oxygen partial pressure in ambient atmosphere.
Dependencies are inferred from the claim text.