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US 5,851,920 AGranted
Method of fabrication of metallization system
AssigneeMotorola, Inc.
InventorsDonald S. Taylor, Gordon M. Grivna, Wayne A. Cronin, Kirby F. Koetz
Life of this patent
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Abstract
A metallization system (19) for a semiconductor component (20) includes depositing a dielectric layer (12) over a substrate (10), etching a via (14) in the dielectric layer (12), sputtering a metal layer (17) of aluminum, copper, and tungsten over the dielectric layer (12) and in the via (14), and sputtering a different metal layer (18) of aluminum and copper over the first metal layer (17) and in the via (14). The metallization system (19) reduces the reliability issues associated with electromigration and stress migration while enhancing the ability to fill vias with large aspect ratios.
Claims20
A method of making a semiconductor component comprising:
- providing a substrate;
- providing a first metal layer comprised of aluminum and a material that reduces aluminum mobility, the first metal layer overlying the substrate;
- and
- providing a second metal layer consisting essentially of aluminum and copper, the second metal layer overlying the first metal layer,
- wherein the step of providing the first metal layer includes providing the first metal layer includes providing a homogeneous layer of aluminum and the material at a first temperature greater than approximately half of a plastic deformation temperature of the first metal layer and wherein the step of providing the second metal layer includes providing a homogeneous layer of aluminum and copper at a second temperature greater than approximately half of a plastic deformation temperature of the second metal layer.
2 more elements
A method of making a semiconductor component comprising:
- providing a substrate;
- providing a first metal layer comprised of aluminum and a material that reduces aluminum mobility, the first metal layer overlying the substrate;
- and
- providing a second metal layer consisting essentially of aluminum and copper, the second metal layer overlying the first metal layer,
- wherein the step of providing the first metal layer includes providing a homogeneous layer of aluminum and the material and wherein the step of providing the second metal layer includes providing a homogeneous layer of aluminum and copper,
- wherein the step of providing the first metal layer includes providing tungsten for the material and providing a concentration of aluminum, a concentration of copper, and a concentration of tungsten for the first metal layer, wherein the concentration of aluminum is higher than the concentration of copper and the concentration of tungsten, and
- wherein the step of providing the first metal layer includes providing the concentration of copper higher than the concentration of tungsten.
4 more elements
A method of making a semiconductor component comprising:
- providing a substrate;
- providing a first metal layer comprised of aluminum and a material thay reduces aluminum mobility, the first metal layer overlying the substrate;
- and
- providing a second metal layer consisting essentially of aluminum and copper, the second metal layer overlying the first metal layer,
- wherein the step of providing the first metal layer includes providing a homogeneous layer of aluminum and copper, and
- wherein the step of providing the first metal layer includes providing the first metal layer at a temperature and sputtering a first sputtering target consisting of aluminum, copper, and tungsten wherein thr first sputtering target has a first atomic, weight concentration of copper of approximately 0.25-5 percent and an atomic weight concentration of tungsten of approximately 0.1-1 percent.
3 more elements
A method of making a semiconductor component comprising:
- providing a substrate;
- providing a first metal layer comprised of aluminum and a material that reduces aluminum mobility, the first metal layer overlying the substrate;
- and
- providing a second metal layer consisting essentially of aluminum and copper, the second metal layer overlying the first metal layer,
- wherein the step of providing the first metal layer includes providing the first metal layer at a first temperature greater than approximately half of a plastic deformation temperature of the first metal layer, and wherein the step of providing the second metal layer includes providing the second metal layer at a second temperature greater than approximately half of a plastic deformation temperature of the second metal layer.
2 more elements
A method of making a semiconductor component comprising:
- providing a substrate;
- providing a first metal layer comprised of aluminum and a material that reduces aluminum mobility, the first metal overlying the substrate;
- and
- providing a second metal layer consisting essentially of aluminum and copper, the second metal layer overlying the first metal layer,
- wherein the steps of providing the first and second metal layers include providing the first and second metal layers at a temperature of approximately 400-600 degrees Celsius.
2 more elements
A method of making a semiconductor component comprising:
- providing a substrate;
- depositing a dielectric layer over the substrate;
- etching a via in the dielectric layer;
- sputtering a first metal layer consisting essentially of aluminum, copper, and tungsten overlying the dielectric layer and in the via wherein the step of sputtering the first metal layer includes using a first sputtering target having a first concentration by weight of copper of approximately 0.25-5 percent and having a concentration by weight of tungsten of approximately 0.1-1 percent;
- and
- sputtering a second metal layer consisting essentially of aluminum and copper overlying the first metal layer and in the via and wherein the second metal layer is substantially devoid of tungsten.
3 more elements
A method of fabricating a semiconductor component comprising:
- providing a substrate;
- depositing a dielectric layer over the substrate;
- etching a via in the dielectric layer;
- sputtering a first metal layer consisting essentially of aluminum, copper, and tungsten overlying the dielectric layer and in the via;
- and
- sputtering a second metal layer consisting essentially of aluminum and copper overlying the first metal layer and in the via wherein the steps of sputtering the first and second metal layers include sputtering the first and second metal layers at a substantially constant temperature of approximately 400-600 degrees Celsius.
3 more elements
Dependencies are inferred from the claim text.