US 5,851,915 AGranted

Method of manufacturing a semiconductor device through a reduced number of simple processes at a relatively low cost

AssigneeNEC Corporation

InventorKuniko Miyakawa

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Abstract

In a method of manufacturing a semiconductor device including a first and a second insulator film and a first and a second conductive layer held to the first and said second insulator films, respectively. The first insulator film is formed to have a first wiring trench along an upper surface of the first insulator film and a first through hole extending from the first wiring trench to a lower surface of the first insulator film. A first conductive material is deposited on the upper surface of the first insulator film to fill the first wiring trench and the first through hole. Thereafter, the first conductive material is partially removed to have an upper surface coplanar with the upper surface of the first insulator film. As a result, the first conductive material becomes the first wiring layer. Next, the second insulator film and the second wiring layer are formed in the manner which is similar to that of forming the first insulator film and the first wiring layer.

Claims21

Dependent claims

A method of manufacturing a semiconductor device including first and second insulator films and first and second wiring layers formed on said first and second insulator films, respectively, said first insulator film extending between first main and first supplementary surfaces opposite each other, said second insulator film extending between a second main surface facing said first supplementary surface and a second supplementary surface opposite said second main surface, said method comprising, in the order recited, the steps of:

(a) forming a first insulator film extending between first main and first supplementary surfaces opposite each other;
(b) forming a first wiring trench along said first supplementary surface of said first insulator film;
(c) forming a first through hole extending from said first wiring trench to said first main surface;
(d) depositing a first inner portion of a first conductive material in said first wiring trench and said first through hole of said first insulator film and a first outer portion of the first conductive material on said first supplementary surface;
(e) removing said first outer portion by polishing and leaving said first inner portion to form a first wiring layer;
(f) forming a second insulator film on said first supplementary surface, said second insulator film extending between a second main surface facing said first supplementary surface and a second supplementary surface opposite said second main surface;
(g) forming a second wiring trench along said second supplementary surface of said second insulator film in alignment with said first wiring trench;
(h) forming a second through hole extending from said second wiring trench to said first wiring layer in alignment with said first through hole;
(i) depositing a second inner portion of a second conductive material in said second wiring trench and said second through hole of said second insulator film with said second inner portion in contact with said first wiring layer, and a second outer portion of the second conductive material on said second supplementary surface;
(j) exposing said first wiring layer and said second conductive material to a temperature at which reflowing of each of said first wiring layer and said second conductive material occurs to place said second inner portion in close contact with said first wiring layer;
and
(k) removing said second outer portion by polishing and leaving said second inner portion to form a second wiring layer.

9 more elements

A method of manufacturing a semiconductor device, comprising the steps of:

forming a first insulator film on a semiconductor substrate;
forming a first wiring trench along a surface of the first insulator film;
forming a first through hole extending from the first wiring trench to the semiconductor substrate to expose a portion of the semiconductor substrate;
depositing a first conductive barrier film on the first insulator film and the exposed portion of the semiconductor substrate;
depositing a first conductive metal layer on the first conductive barrier film;
heating the semiconductor substrate to a reflowing temperature of the first conductive metal layer;
polishing the first conductive metal layer and the first conductive barrier film to form a first wiring layer;
forming a second insulator film on the first wiring layer;
forming a second wiring trench along a surface of the second insulator film;
forming a second through hole extending from the second wiring trench to the first wiring layer to expose a portion of the first wiring layer;
depositing a second conductive barrier film on the second insulator film and the exposed portion of the first wiring layer;
depositing a second conductive metal layer on the second conductive barrier film;
heating the semiconductor substrate to a reflowing temperature of the second conductive metal layer;
and
polishing the second conductive metal layer and the second conductive barrier film to form a second wiring layer.

12 more elements

Dependencies are inferred from the claim text.