Method of manufacturing an isolation region of a semiconductor device with advanced planarization
AssigneeAdvanced Micro Devices, Inc.
InventorsMark I. Gardner, Mark C. Gilmer
Life of this patent
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Abstract
A semiconductor device manufacturing method of forming an isolation region of a semiconductor device with high planarization is provided. A semiconductor device is formed by forming a mask over a portion of a semiconductor substrate, the mask defining an exposed portion of the substrate. A first oxide region is grown in the exposed portion of the substrate and a second oxide region is formed over the first oxide region to form a composite oxide region. The mask is removed while leaving the composite oxide region. Spacers may be formed on sidewalls of the mask and removed after growing the first oxide region. The composite oxide region may, for example, form a field oxide region.
Claims34
A process of forming a semiconductor device, comprising:
- forming a mask over a portion of a substrate to define an exposed region;
- forming spacers from a nitride on sidewalls of the mask prior to growing a first oxide;
- growing the first oxide in the exposed region of the substrate;
- forming a second oxide region over the first oxide region to form a composite oxide region;
- and
- selectively removing the mask while leaving at least a portion of the composite oxide region.
A process of forming a semiconductor device, comprising:
- forming a mask over a portion of a substrate to define an exposed region;
- forming oxidation-resistant spacers on sidewalls of the mask prior to growing a first oxide region;
- growing the first oxide region in the exposed portion of the substrate;
- forming a second oxide region over the first oxide region to form a composite oxide region;
- removing the spacers;
- and
- removing the mask while leaving the composite oxide region.
A process of forming a semiconductor device, comprising:
- forming a mask over an active region of a substrate;
- forming spacers, selective to oxide, on sidewalls of the mask prior to growing a silicon dioxide region;
- growing the silicon dioxide region in a field area of the substrate adjacent the mask;
- depositing a silicon dioxide layer over the silicon dioxide region and the mask;
- planarizing the silicon dioxide layer to expose the mask;
- and
- removing the mask while leaving the planarized silicon dioxide layer;
- wherein the spacers are removed bv etching before or after depositing the silicon dioxide layer.
A process of forming a semiconductor device, comprising:
- forming a mask over a portion of a substrate to define an exposed region;
- forming a spacer, selective to oxide, on a sidewall of the mask prior to growing a first oxide;
- growing the first oxide in the exposed region of the substrate;
- forming a second oxide region over the first oxide region to form a composite oxide region;
- and
- selectively removing the mask while leaving at least a portion of the composite oxide region;
- wherein the spacer is removed before or after forming the composite oxide region.
Dependencies are inferred from the claim text.