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US 5,851,870 AGranted
Method for making a capacitor
AssigneeLucent Technologies Inc.
InventorsDayo Alugbin, Chung Wai Leung, Joseph Rudolph Radosevich, Ranbir Singh, Daniel Mark Wroge
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Abstract
A novel capacitor design for use in semiconductor integrated circuits is disclosed. The capacitor includes a metal-dielectric-metal stack formed within a window and upon a conductive substrate. Contact to the top plate of the capacitor is through a window within a window, while contact to the bottom plate is achieved by a guard ring which contacts the conductive substrate.
Claims2
A method for forming a capacitor comprising:
- forming a conductive substrate;
- forming a patterned dielectric upon said substrate, said patterned dielectric having an opening which exposes said substrate, said opening having at least one side;
- forming at least one conductive material within said opening;
- said conductive material contacting said substrate and not contacting said sides of said opening;
- forming a dielectric upon said conductive material, said dielectric not contacting said sides of said opening;
- forming a conductive top layer upon said dielectric layer, said conductive top layer not contacting said sides of said opening.
3 more elements
A method of forming a capacitor comprising:
- forming a substrate of conductive polysilicon;
- forming a patterned dielectric upon said polysilicon;
- said patterned dielectric having a window exposing said polysilicon, said window having sides;
- depositing a layer of titanium upon said dielectric and in said window and contacting said polysilicon;
- depositing a layer of layer of titanium nitride upon said layer of titanium said layers of titanium and titanium nitride, termed herein a bilayer;
- said bilayer having sides which contact said sides of said window and having a bottom which contacts said polysilicon;
- depositing a blanket layer of silicon dioxide upon said bilayer;
- patterning said layer of silicon dioxide so that said layer of silicon dioxide contacts said bottom of said bilayer and does not contact said sides of said bilayer;
- depositing a blanket layer of aluminum, said blanket layer of aluminum contacting sides of said bilayer and contacting said patterned layer of silicon dioxide;
- patterning said aluminum layer and said bilayer to expose said conductive polysilicon, a portion of said aluminum layer remaining on top of said layer of silicon dioxide and a portion of said aluminum layer remaining on top of said sides of said bilayers.
7 more elements
Dependencies are inferred from the claim text.