Back to results
US 5,851,860 AGranted
Semiconductor device and method for producing the same
AssigneeSharp Kabushiki Kaisha
InventorsNaoki Makita, Takashi Funai
Life of this patent
Estimating the term…
Abstract
The semiconductor device of the invention includes: a substrate having an insulating surface; an active region formed on the insulating surface of the substrate, the active region being formed by a crystalline silicon film; and an insulating thin film formed on the active region. In the semiconductor device, the active region contains a catalyst element for promoting a crystallization of an amorphous silicon film by a heat treatment.
Claims10
A method for producing a semiconductor device comprising the sequential steps of:
- continuously forming, by a plasma CVD method, an amorphous silicon film and an insulating film to be used as a gate insulating film of the semiconductor device on a substrate having an insulating surface without exposing the substrate to an outside gas, no other process step being interposed between the amorphous silicon film formation and the insulating film formation;
- introducing a catalyst element for promoting a crystallization of the amorphous silicon film through the insulating film into the amorphous silicon film by an ion implantation method, and wherein a channel region of the semiconductor device is formed in a region to which the catalyst has been implanted;
- crystallizing at least a portion of the amorphous silicon film, to which the catalyst is added, by a heat treatment;
- and
- forming a gate electrode on the insulating film.
2 more elements
A method for producing a semiconductor device comprising the sequential steps of:
- continuously forming, by a plasma CVD method, a first insulating film, an amorphous silicon film and a second insulating film on a substrate without exposing the substrate to an outside gas, the second insulating film being used as a gate insulating film of the semiconductor device, no other process step interposed between the first insulating film formation and the amorphous silicon film formation and between the amorphous silicon film formation and the second insulating film formation;
- introducing a catalyst element for promoting a crystallization of the amorphous silicon film through the second insulating film into the amorphous silicon film by an ion implantation method, and wherein a channel region of the semiconductor device is formed in a region to which the catalyst has been implanted;
- crystallizing at least a portion of the amorphous silicon film, to which the catalyst is added, by a heat treatment;
- and
- forming a gate electrode on the insulating film.
2 more elements
Dependencies are inferred from the claim text.