Ferroelectric semiconductor device and method of manufacture
AssigneeMotorola, Inc.
InventorsWilliam J. Ooms, Jerald A. Hallmark
Life of this patent
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Abstract
A ferroelectric semiconductor device (10) and a method of manufacturing the ferroelectric semiconductor device (10). The ferroelectric semiconductor device (10) has a layer (15) of ferroelectric material disposed on a semiconductor substrate (11) and a gate structure (27) formed on the semiconductor substrate (11). A source region (23) and a drain region (24) are formed on the semiconductor substrate such that the source region (23) and the drain region (24) are laterally spaced apart from the gate structure (27).
Claims13
A method for manufacturing a ferroelectric device, comprising the steps of:
- providing a semiconductor material of a first conductivity type;
- forming a ferroelectric gate structure over the semiconductor material, the ferroelectric gate structure having first and second edges;
- forming impurity regions of a second conductivity type in the semiconductor material and located on opposing sides of the ferroelectric crate structure, where the impurity regions are spaced apart from the first and second edges and the impurity regions are not self-aligned to the ferroelectric gate structure;
- and
- forming first and second contacts to the semiconductor material, the first contact spaced apart from the first edge of the ferroelectric gate structure and the second contact spaced apart from the second edge of the ferroelectric gate structure.
A method for manufacturing a ferroelectric device, comprising the steps of:
- providing a layer of semiconductor material on a layer of ferroelectric material, the semiconductor material having a first conductivity type;
- forming of a ferroelectric gate structure over the semiconductor material, the ferroelectric gate structure having first and second edges;
- and
- forming of first and second contacts to the semiconductor material, the first contact spaced apart from the first edge of the ferroelectric rate structure and the second contact spaced apart from the second edge of the ferroelectric gate structure.
A method for manufacturing a ferroelectric semiconductor device, comprising the steps of:
- providing a semiconductor substrate;
- forming a ferroelectric material over the semiconductor substrate;
- forming a layer of conductive material over the ferroelectric material;
- forming a gate structure from the ferroelectric material and the layer of conductive material, the gate structure having first and second sides;
- disposing a source region and a drain region in the ferroelectric material on the respective first and second sides of the crate structure, wherein the source region and the drain region are spaced apart from the gate structure and not aligned to the gate structure;
- forming a source electrode adjacent the first side of the gate structure and in contact with a first portion of the layer of conductive material;
- and
- forming a drain electrode adjacent the second side of the gate structure and in contact with a second portion of the layer of conductive material.
Dependencies are inferred from the claim text.