Method of manufacturing a super conduction field effect transistor

A method for manufacturing a field effect transistor having a bi-crystal boundary junction comprising:

• preparing a bi-crystal substrate;
• depositing a non-super conductive oxide layer on said bi-crystal substrate;
• forming a super conductive thin films for source and drain electrode on said non-super conductive oxide layer by depositing a super conductive thin film thereon;
• forming a boundary channel interposed between said bi-crystal super conductive thin films for source and drain electrode and extended into said non-super conductive oxide layer and said bi-crystal substrate;
• forming an amorphous insulating layer for gate electrode on a portion between said bi-crystal super conductive thin films for source and drain electrode above said boundary channel by depositing an amorphous insulating layer on the entire surface of the resulting structure and performing a mask patterning process thereof;
• and
• forming metal pads for electrode on said bi-crystal super conductive thin films for source and drain electrode and the amorphous insulating layer for gate electrode by depositing a metal layer on the entire surface of the resulting structure and performing a mask patterning process thereof.