Phase shift masks including chromium oxide and alumina phase shifter patterns, and methods of manufacturing and using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSung-chul Lim, Sang-gyun Woo, Ho-young Kang, Kwang-soo No
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Abstract
A half tone phase shift mask includes a substrate which is transparent with respect to exposure radiation and a phase shifter pattern on the substrate. The phase shifter pattern comprises chromium oxide (Cr.sub.2 O.sub.3) and alumina (Al.sub.2 O.sub.3). Fine patterns can therefore be formed using phase shift masking of exposure radiation having a 193 nm wavelength, such as light from an ArF excimer laser.
Claims33
A phase shift mask comprising:
- a substrate which is transparent with respect to exposure radiation;
- and
- a phase shifter pattern on the substrate, which exposes a predetermined area of the substrate, the phase shifter pattern comprising a mixture or a solid solution of chromium oxide (Cr.sub.2 O.sub.3) and alumina (Al.sub.2 O.sub.3) that form a uniform phase shifter pattern, the transmissivity and phase difference of which are controlled by the ratio of the chromium oxide and alumina;
- and
- a radiation blocking film pattern on a predetermined portion of the phase shifter pattern opposite the substrate.
A phase shift mask manufacturing method comprising the steps of:
- forming a uniform phase shifter pattern comprising a mixture or a solid solution of chromium oxide (Cr.sub.2 O.sub.3) and alumina (Al.sub.2 O.sub.3) on a substrate which is transparent to exposure radiation, the phase shifter pattern exposing a predetermined area of the substrate, the transmissivity and phase difference of which are controlled by the ratio of the chromium oxide and the alumina;
- and
- forming a radiation blocking film pattern on a predetermined portion of the phase shifter pattern, opposite the substrate.
A phase shift mask manufacturing method comprising the steps of:
- sputtering a uniform phase shifter comprising a mixture or a solid solution of chromium oxide and alumina on a substrate which is transparent to exposure radiation;
- forming a material layer on the phase shifter;
- patterning the material layer and the phase shifter until a predetermined area of the substrate is exposed to thereby form a radiation blocking film and a phase shifter pattern, the transmissivity and phase difference of which are controlled by the ratio of the chromium oxide and the alumina;
- and
- removing a predetermined portion of the radiation blocking film on the phase shifter pattern until a predetermined portion of the phase shifter pattern is exposed, to thereby form a radiation blocking film pattern.
A method of fabricating an integrated circuit comprising the step of:
- exposing an integrated circuit to patterned exposure radiation by passing the exposure radiation through a phase shift mask which includes a substrate which is transparent to the exposure radiation and a phase shift pattern on the substrate, the phase shifter pattern comprising a mixture or a solid solution of chromium oxide (Cr.sub.2 O.sub.3) and alumina (Al.sub.2 O.sub.3) that form a uniform phase shifter pattern, the transmissivity and phase difference of which are controlled by the ratio of the chromium oxide and alumina;
- and a radiation blocking film pattern on a predetermined portion of the phase shifter patter opposite the substrate.
A phase shift mask for use with exposure radiation having a wavelength of 193 nm or less comprising:
- a substrate which is transparent with respect to exposure radiation having a wavelength of 193 nm or less;
- and
- a phase shifter pattern on the substrate, which exposes a predetermined area of the substrate, the phase shifter pattern comprising chromium oxide (Cr.sub.2 O.sub.3) and alumina (Al.sub.2 O.sub.3).
A manufacturing method for a phase shift mask for use with exposure radiation having a wavelength of 193 nm or less, comprising the step of:
- forming a phase shifter pattern comprising chromium oxide (CrO.sub.2) and alumina (Al.sub.2 O.sub.3) on a substrate which is transparent to exposure radiation having a wavelength of 193 nm or less, the phase shifter pattern exposing a predetermined area of the substrate.
A manufacturing method for a phase shift mask for use with exposure radiation having a wavelength of 193 nm or less, comprising the steps of:
- sputtering a phase shifter comprising chromium oxide and alumina on a substrate which is transparent to exposure radiation having a wavelength of 193 nm or less;
- forming a material layer on the phase shifter;
- patterning the material layer and the phase shifter until a predetermined area of the substrate is exposed to thereby form a radiation blocking film and a phase shifter pattern;
- and
- removing a predetermined portion of the radiation blocking film on the phase shifter pattern until a predetermined portion of the phase shifter pattern is exposed, to thereby form a radiation blocking film pattern.
A method of fabricating an integrated circuit comprising the step of:
- exposing an integrated circuit to patterned exposure radiation having a wavelength of 193 nm or less, by passing the exposure radiation through a phase shift mask which includes a substrate which is transparent to the exposure radiation having wavelength of 193 nm or less, and a phase shift pattern on the substrate, the phase shifter pattern comprising chromium oxide (Cr.sub.2 O.sub.3) and alumina (Al.sub.2 O.sub.3).
Dependencies are inferred from the claim text.