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US 5,850,288 AGranted
Method for manufacturing a semiconductor device
AssigneeNEC Corporation
InventorsIchirou Honma, Fumiki Aisou
Life of this patent
Estimating the term…
Abstract
In a system for detecting a degree of unevenness of a surface of a semiconductor device, the surface is irradiated with light having a wavelength of approximately 240 nm to 500 nm. The degree of unevenness of the surface is determined in accordance with an intensity of reflected light from the surface.
Claims6
A method for manufacturing a semiconductor device, comprising the steps of:
- forming an amorphous silicon layer;
- performing a heating operation upon said amorphous silicon layer to grow a hemispherical-grain polycrystalline silicon layer on said amorphous silicon layer;
- irradiating said hemispherical-grain polycrystalline silicon layer with light having a wavelength of approximately 240 nm to 500 nm;
- and
- measuring an intensity of reflected light from said hemispherical-grain polycrystalline silicon layer to determine the degree of an unevenness of said hemispherical-grain polycrystalline silicon layer.
2 more elements
A method for manufacturing a semiconductor device, comprising the steps of:
- forming an amorphous silicon layer;
- performing a heating operation upon said amorphous silicon layer to grow a hemispherical-grain polycrystalline silicon layer on said amorphous silicon layer;
- irradiating said hemispherical-grain polycrystalline silicon layer with light having a wavelength of approximately 240 nm to 500 nm;
- and
- measuring an intensity of reflected light from said hemispherical-grain polycrystalline silicon layer to determine the degree of unevenness of said hemispherical-grain polycrystalline silicon layer;
- and
- determining the degree of an unevenness of said hemispherical-grain polycrystalline silicon layer in accordance with a stored relationship between the intensity of reflected light and the unevenness degree of said hemispherical-grain polycrystalline silicon layer.
4 more elements
A method for manufacturing a semiconductor device, comprising the steps of:
- forming an amorphous silicon layer;
- performing a heating operation upon said amorphous silicon layer to grow a hemispherical-grain polycrystalline silicon layer on said amorphous silicon layer;
- irradiating said hemispherical-grain polycrystalline silicon layer with light having a wavelength of approximately 240 nm to 500 nm;
- and
- measuring an intensity of reflected light from said hemispherical-grain polycrystalline silicon layer to determine the degree of an unevenness of said hemispherical-grain polycrystalline silicon layer;
- and
- determining a capacitance of a capacitor having said hemispherical-grain polycrystalline silicon layer and said amorphous silicon layer as a capacitor electrode in accordance with a stored relationship between the intensity of reflected light and the capacitance of said capacitor.
4 more elements
A method for manufacturing a semiconductor device, comprising the steps of:
- forming an amorphous silicon layer;
- performing a heating operation upon said amorphous silicon layer to grow a hemispherical-grain polycrystalline silicon layer on said amorphous silicon layer;
- forming an insulating layer on said hemispherical-grain polycrystalline silicon layer;
- irradiating said insulating silicon layer with light having a wavelength of approximately 240 nm to 500 nm;
- and
- measuring an intensity of reflected light from said insulating layer to determine the degree of an unevenness of said hemispherical-grain polycrystalline silicon layer.
3 more elements
A method for manufacturing a semiconductor device, comprising the steps of:
- forming an amorphous silicon layer;
- performing a heating operation upon said amorphous silicon layer to grow a hemispherical-grain polycrystalline silicon layer on said amorphous silicon layer;
- forming an insulating layer on said hemispherical-grain polycrystalline silicon layer;
- irradiating said insulating layer with light having a wavelength of approximately 240 nm to 500 nm;
- measuring the intensity of reflected light from said insulating layer and;
- determining the degree of an unevenness of said hemispherical-grain polycrystalline silicon layer in accordance with a stored relationship between the intensity of reflected light and the unevenness degree of said hemispherical-grain polycrystalline silicon layer.
3 more elements
A method for manufacturing a semiconductor device, comprising the steps of:
- forming an amorphous silicon layer;
- performing a heating operation upon said amorphous silicon layer to grow a hemispherical-grain polycrystalline silicon layer on said amorphous silicon layer;
- forming an insulating layer on said hemispherical-grain polycrystalline silicon layer;
- irradiating said insulating layer with light having a wavelength of approximately 240 nm to 500 nm;
- measuring an intensity of reflected light from said insulating layer;
- and
- determining a capacitance of a capacitor having said hemispherical-grain polycrystalline silicon layer and said amorphous silicon layer as a capacitor electrode in accordance with a stored relationship between the intensity of reflected light and the capacitance of said capacitor.
4 more elements
Dependencies are inferred from the claim text.